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IRG4IBC30KD - INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

International Rectifier

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Datasheet Details

Part number	IRG4IBC30KD
Manufacturer	International Rectifier ↗
File Size	195.55 KB
Description	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
Datasheet	IRG4IBC30KD_InternationalRectifier.pdf

IRG4IBC30KD Product details

Features

High switching speed optimized for up to 25kHz with low VCE(on).
Short Circuit Rating 10µs @ 125°C, VGE = 15V.
Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than previous generation.
IGBT co-packaged with.

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Published: Nov 24, 2005 |