IRG4IBC10UD - INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

International Rectifier

Datasheet Details

Part number	IRG4IBC10UD
Manufacturer	International Rectifier
File Size	199.12 KB
Description	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
Datasheet	IRG4IBC10UD_InternationalRectifier.pdf

UltraFast: Optimized for high operating up to 80 kHz in hard switching, > 200 kHz in resonant mode.
Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than previous generation.
IGBT co-packaged with.

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Published: Nov 24, 2005 |