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IRG4CC20FB - IGBT Die

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IRG4CC20FB Product details

Description

Guaranteed (Min/Max) VCE (on) V(BR)CES Collector-to-Emitter Saturation Voltage Colletor-to-Emitter Breakdown Voltage 1.6V Max.600V Min.VGE(th) ICES Gate Threshold Voltage Zero Gate Voltage Collector Current 3.0V Min., 6.0V Max.250µA Max.IGES Gate-to-Emitter Leakage Current ± 1.1µA Max.Test Conditions IC = 3.25A, TJ = 25°C, VGE = 15V TJ = 25°C, ICES = 250µA, VGE = 0V VGE = VCE , TJ =25°C, IC =250µA TJ = 25°C, VCE = 600V TJ = 25°C, VGE = +/- 20V Mechanical Data Nominal Backmetal

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