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IRG4BC40KPBF - INSULATED GATE BIPOLAR TRANSISTOR

International Rectifier

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Datasheet Details

Part number	IRG4BC40KPBF
Manufacturer	International Rectifier ↗
File Size	600.00 KB
Description	INSULATED GATE BIPOLAR TRANSISTOR
Datasheet	IRG4BC40KPBF_InternationalRectifier.pdf

IRG4BC40KPBF Product details

Features

Short Circuit Rated UltraFast: optimized for high operating frequencies >5.0 kHz , and Short Circuit Rated to 10µs @ 125°C, VGE = 15V.
Generation 4 IGBT design provides higher efficiency than Generation 3.
Industry standard TO-247AC package.
Lead-Free C Short Circuit Rated UltraFast IGBT VCES = 600V G E VCE(on) typ. = 2.1V @VGE = 15V, IC = 25A n-channel Benefits.
Generation 4 IGBTs offer highest efficiency available.
IGBTs optimized for.

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Published: Jul 4, 2007 |