Datasheet Specifications
- Part number
- IRG4BC30FD-S
- Manufacturer
- International Rectifier
- File Size
- 1.25 MB
- Datasheet
- IRG4BC30FD-S_InternationalRectifier.pdf
- Description
- INSULATED GATE BIPOLAR TRANSISTOR
Description
www.DataSheet4U.com PD - 96929 IRG4BC30FD-S INSULATED GATE BIPOLAR TRANSISTOR WITH HYPERFAST DIODE C Fast CoPack IGBT VCES = 600V .
Features
* Fast: optimized for medium operating frequencies (1-5 kHz in hard switching, >20kHz in resonant mode). Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3. IGBT co-packaged with HEXFREDTM ultrafast, ultra-soft recovery anti-parallel diodes fIRG4BC30FD-S Distributors
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