IRG4BC10KDPBF HEXFET Power MOSFET

International Rectifier

Description

PD -94903 IRG4BC10KDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE .

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Datasheet Specifications

Part number: IRG4BC10KDPBF
Manufacturer: International Rectifier
File Size: 291.64 KB
Datasheet: IRG4BC10KDPBF_InternationalRectifier.pdf
Description: HEXFET Power MOSFET

Features

* C Short Circuit Rated UltraFast IGBT VCES = 600V
* High short circuit rating optimized for motor control, tsc =10µs, @360V VCE (start), TJ = 125°C, VGE = 15V
* Combines low conduction losses with high switching speed
* Tighter parameter distribution and higher efficiency th

IRG4BC10KDPBF Distributors

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IRG4BC10KDPBF HEXFET Power MOSFET International Rectifier

International Rectifier IRG4BC10KDPBF-like datasheet