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IRFZ48RL HEXFET Power MOSFET

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Description

PD - 94074 HEXFET® Power MOSFET l l l l l l IRFZ48RS IRFZ48RL VDSS = 60V Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperatu.
Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low onresistance per silicon.

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Datasheet Specifications

Part number
IRFZ48RL
Manufacturer
International Rectifier
File Size
201.74 KB
Datasheet
IRFZ48RL_InternationalRectifier.pdf
Description
HEXFET Power MOSFET

Features

* D D IR E C T IO N 1 .8 5 (.0 7 3 ) 1 .6 5 (.0 6 5 ) 1 1 .6 0 (.4 5 7 ) 1 1 .4 0 (.4 4 9 ) 1 5 .4 2 (.6 0 9 ) 1 5 .2 2 (.6 0 1 ) 2 4 .3 0 (.9 5 7 ) 2 3 .9 0 (.9 4 1 ) TR L 1 0 .9 0 (.4 2 9 ) 1 0 .7 0 (.4 2 1 ) 1 .7 5 (.0 6 9 ) 1 .2 5 (.0 4 9 ) 1 6 .1 0 (.6 3 4 ) 1 5 .9 0 (.6 2 6 ) 4 .7 2 (.1 3 6

Applications

* D RDS(on) = 0.018Ω G S ID = 50

IRFZ48RL Distributors

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