Description
Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High .
Features
* 40 7. ΔT = Allowable rise in junction temperature, not to exceed Tjmax (assumed as
25°C in Figure 14, 15). tav = Average time in avalanche. 20 D = Duty cycle in avalanche = tav
* f
ZthJC(D, tav) = Transient thermal resistance, see Figures 13)
0 25 50 75 100 125 150 175
Starting TJ , Junction
Applications
* l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits
G
IRFR4615PbF
IRFU4615PbF
HEXFET® Power MOSFET
D VDSS
150V
RDS(on) typ. 34m:
max. 42m:
S ID
33A
Benefits l Improved Gate, Avalanche