Description
Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High .
Features
* cle in avalanche = tav
* f
ZthJC(D, tav) = Transient thermal resistance, see Figures 13)
0 25 50 75 100 125 150 175
Starting TJ , Junction Temperature (°C)
PD (ave) = 1/2 ( 1.3
* BV
* Iav) = DT/ ZthJC Iav = 2DT/ [1.3
* BV
* Zth] EAS (AR) = PD (ave)
* tav
Fig 15. Maximum Avalanche Ene
Applications
* l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits
G
Benefits l Improved Gate, Avalanche and Dynamic dV/dt
Ruggedness l Fully Characterized Capacitance and Avalanche
SOA l Enhanced body diode d