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IRFU120N, IRFR120N Power MOSFET

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Description

PD - 91365B IRFR/U120N HEXFET® Power MOSFET l l l l l Surface Mount (IRFR120N) Straight Lead (IRFU120N) Advanced Process Technology Fast Switching F.
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon.

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This datasheet PDF includes multiple part numbers: IRFU120N, IRFR120N. Please refer to the document for exact specifications by model.
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Datasheet Specifications

Part number
IRFU120N, IRFR120N
Manufacturer
International Rectifier
File Size
152.66 KB
Datasheet
IRFR120N_InternationalRectifier.pdf
Description
Power MOSFET
Note
This datasheet PDF includes multiple part numbers: IRFU120N, IRFR120N.
Please refer to the document for exact specifications by model.

Features

* 3 5 ) 1 .0 2 (.0 4 0 ) 1 .6 4 (.0 2 5 ) 1 2 3 -B 1 .5 2 (.0 6 0 ) 1 .1 5 (.0 4 5 ) 3X 1 .1 4 (.0 4 5 ) 2 X 0 .7 6 (.0 3 0 ) 2 .2 8 (.0 9 0 ) 4 .5 7 (.1 8 0 ) 0 .8 9 (.0 3 5 ) 0 .6 4 (.0 2 5 ) 0 .2 5 (.0 1 0 ) M A M B 0 .5 1 (.0 2 0 ) M IN . 1 0 .4 2 (.4 1 0 ) 9 .4 0 (.3 7 0 ) 1 .2 7 (.0 5 0 ) 0 .8

Applications

* The D-PAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version (IRFU series) is for throughhole mounting applications. Power dissipation levels up to 1.5 watts are possible in typical surface mount applications. D -P A K T O -252 A A

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