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IRFS3307 - HEXFET Power MOSFET

Download the IRFS3307 datasheet PDF (IRFB3307 included). The manufacturer datasheet provides complete specifications, pinout details, electrical characteristics, and typical applications for hexfet power mosfet.

Features

  • ted for every part type. 2. Safe operation in Avalanche is allowed as long as neither Tjmax nor Iav (max) is exceeded. 3. Equation below based on circuit and waveforms shown in Figures 16a, 16b. 4. PD (ave) = Average power dissipation per single avalanche pulse. 5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 6. Iav = Allowable avalanche current. 7. ∆T = Allowable rise in junction temperature, not to exceed Tjmax (assumed as 25°C in Figure 14, 15). ta.

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Note: The manufacturer provides a single datasheet file (IRFB3307_InternationalRectifier.pdf) that lists specifications for multiple related part numbers.

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Full PDF Text Transcription

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Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits Benefits l Improved Gate, Avalanche and Dynamic dV/dt Ruggedness l Fully Characterized Capacitance and Avalanche SOA l Enhanced body diode dV/dt and dI/dt Capability G PD - 96901C IRFB3307 IRFS3307 IRFSL3307 HEXFET® Power MOSFET D VDSS RDS(on) typ. max. S ID 75V 5.0m: 6.
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