IRFS3107PbF - Power MOSFET

Features

50 0 25 50 75 100 125 150 175 Starting TJ , Junction Temperature (°C) Notes on Repetitive Avalanche Curves , Figures 14, 15: (For further info, see AN-1005 at www. irf. com) 1. Avalanche failures assumption: Purely a thermal phenomenon and failure occurs at a temperature far in excess of Tjmax. This is validated for every part type. 2. Safe operation in Avalanche is allowed as long asTjmax is not exceeded. 3. Equation below based on circuit and waveforms shown in Figures 16a, 16b. 4. PD (ave).

IRFS3107PbF power mosfet by International Rectifier - Datasheet Preview

Datasheet Details

Part number	IRFS3107PbF
Manufacturer	International Rectifier (now Infineon)
File Size	368.17 KB
Description	Power MOSFET
Datasheet	IRFS3107PbF Datasheet

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Full PDF Text Transcription

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Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits G Benefits l Improved Gate, Avalanche and Dynamic dV/dt Ruggedness l Fully Characterized Capacitance and Avalanche SOA l Enhanced body diode dV/dt and dI/dt Capability l Lead-Free PD -97144A IRFS3107PbF IRFSL3107PbF HEXFET® Power MOSFET D VDSS RDS(on) typ. max. 75V 2.5m: 3.

Published: Mar 15, 2016 |