IRFP3306PBF Datasheet (International Rectifier)

IRFP3306PBF, Power MOSFET

PD - 97128 Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits G Benefits l Improved Gate, Avalanche and Dynamic dV/dt Ruggedness l Fully Characterized Capacitance and Avalanche SOA l Enhanced body diode dV/dt and dI/dt Capability l Lead-Free IRFP3306PbF HEXFET® Power MOSFET D VDSS RDS(on) typ.

max.

60V 3.3m: 4.2m: ID (Silicon Limited) 160A c S ID (Package Limited) 120A

IRFP3306PBF Features

* ilure occurs at a temperature far in excess of Tjmax. This is validated for every part type. 2. Safe operation in Avalanche is allowed as long asTjmax is not exceeded. 3. Equation below based on circuit and waveforms shown in Figures 16a, 16b. 4. PD (ave) = Average power dissipation per single avala