IRFN3710 Datasheet (International Rectifier)

IRFN3710, TRANSISTOR N-CHANNEL

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PD-9.1417 REPETITIVE AVALANCHE AND dv/dt RATED IRFN3710 N-CHANNEL HEXFET® TRANSISTOR 100 Volt, 0.028Ω , HEXFET Generation 5 HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area.

This benefit, combined with the fast switching speed and ruggedized device design for which HEXFETs are well known, provides the designer with

IRFN3710 Features

* n n n n n n n n Surface Mount Small Footprint Alternative to TO-3 Package Hermetically Sealed Avalanche Energy Rating Dynamic dv/dt Rating Simple Drive Requirements Lightweight Absolute Maximum Ratings Parameter ID @ VGS = 10V, TC = 25°C Continuous Drain Current ID @ VGS = 10V, TC = 100°C Continu