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IRFN3710 - TRANSISTOR N-CHANNEL

Features

  • n n n n n n n n Surface Mount Small Footprint Alternative to TO-3 Package Hermetically Sealed Avalanche Energy Rating Dynamic dv/dt Rating Simple Drive Requirements Lightweight Absolute Maximum Ratings Parameter ID @ VGS = 10V, TC = 25°C Continuous Drain Current ID @ VGS = 10V, TC = 100°C Continuous Drain Current IDM Pulsed Drain Current  PD @ TC = 25°C Max. Power Dissipation Linear Derating Factor VGS Gate-to-Source Voltage EAS Single Pulse Avalanche Energy ‚ I AR Avalanche Current  EAR Re.

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Full PDF Text Transcription

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Previous Datasheet www.DataSheet4U.com Index Next Data Sheet Provisional Data Sheet No. PD-9.1417 REPETITIVE AVALANCHE AND dv/dt RATED IRFN3710 N-CHANNEL HEXFET® TRANSISTOR 100 Volt, 0.028Ω , HEXFET Generation 5 HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design for which HEXFETs are well known, provides the designer with an extremely efficient device for use in a wide variety of applications. The Surface Mount Device 1 (SMD-1) package represents anothther step in the continual evolution of surface mount technology.
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