IRFM460 - Power MOSFET

International Rectifier

Datasheet Details

Part number	IRFM460
Manufacturer	International Rectifier ↗
File Size	1.20 MB
Description	Power MOSFET
Datasheet	IRFM460_InternationalRectifier.pdf

HEXFET MOSFET technology is the key to IR HiRel advanced line of power MOSFET transistors.

Simple Drive Requirements.
Hermetically Sealed.
Dynamic dv/dt Rating.
Light Weight Absolute Maximum Ratings Symbol Parameter ID1 @ VGS = 10V, TC = 25°C Continuous Drain Current ID2 @ VGS = 10V, TC = 100°C Continuous Drain Current IDM @TC = 25°C Pulsed Drain Current  PD @TC = 25°C Maximum Power Dissipation Linear Derating Factor VGS EAS IAR EAR dv/dt Gate-to-Source Voltage Single Pulse Avalanche Energy  Avalanche Current  Repetitive Avalanche Energy  Peak Diod.

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Published: Oct 27, 2005 |