IRFL1006PBF HEXFET Power MOSFET

International Rectifier

Description

PD - 95316 IRFL1006PbF HEXFET® Power MOSFET Surface Mount Advanced Process Technology Dynamic dv/dt Rating Fast Switching Fully Avalanche Rated Lead-.
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.

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Datasheet Specifications

Part number: IRFL1006PBF
Manufacturer: International Rectifier
File Size: 132.41 KB
Datasheet: IRFL1006PBF_InternationalRectifier.pdf
Description: HEXFET Power MOSFET

Features

* 2,500 DEVICES. 13.20 (.519) 12.80 (.504) 15.40 (.607) 11.90 (.469) 4 330.00 (13.000) MAX. 50.00 (1.969) MIN. NOTES : 1. OUTLINE COMFORMS TO EIA-418-1. 2. CONTROLLING DIMENSION: MILLIMETER. . 3. DIMENSION MEASURED @ HUB. 4. INCLUDES FLANGE DISTORTION @ OUTER EDGE. 14.40 (.566) 12.40 (.488) 18.40

Applications

* The SOT-223 package is designed for surface-mount using vapor phase, infra red, or wave soldering techniques. Its unique package design allows for easy automatic pickand-place as with other SOT or SOIC packages but has the added advantage of improved thermal performance due to an enlarged tab for h

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IRFL1006PBF HEXFET Power MOSFET International Rectifier

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