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PD -96265 www.DataSheet4U.com
IRFH5250PbF
HEXFET® Power MOSFET
VDS RDS(on) max
(@VGS = 10V)
25 1.15 52 1.3 100
V m
:
PQFN 5X6 mm
Qg (typical) RG (typical) ID
(@Tc(Bottom) = 25°C)
nC
h
:
A
Applications
• OR-ing MOSFET for 12V (typical) Bus in-Rush Current • Battery Operated DC Motor Inverter MOSFET
Features and Benefits
Features Benefits
Low RDSon (<1.15 mΩ) Low Thermal Resistance to PCB (<0.5°C/W) 100% Rg tested Low Profile (<0.