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IRFH5250DPbF
V DS RDS(on) max
(@V GS = 10V)
25 1.4 0.6 27 100
V mΩ V ns A
HEXFET® Power MOSFET
V SD
max
(@I S = 5.0A)
trr (typical) ID
(@Tmb = 25°C)
h
PQFN 5X6 mm
Applications
• Synchronous MOSFET for high frequency buck converters
Features and Benefits
Features Benefits
Low RDSon (<1.4mΩ) Schottky Intrinsic Diode with Low Forward Voltage Low Thermal Resistance to PCB (<0.8°C/W) 100% Rg tested Low Profile (<0.
IRFH5250DPBF Datasheet
