IRFG5210 - Combination 2N-2P-CHANNEL HEXFET MOSFET TECHNOLOGY

Name: IRFG5210
SKU: IRFG5210-570089

International Rectifier

The IRFG5210 by International Rectifier is a Combination 2N-2P-CHANNEL HEXFET MOSFET TECHNOLOGY. Below is the official datasheet preview.

Datasheet Details

Part number	IRFG5210
Manufacturer	International Rectifier
File Size	217.24 KB
Description	Combination 2N-2P-CHANNEL HEXFET MOSFET TECHNOLOGY
Datasheet	IRFG5210_InternationalRectifier.pdf
Additional preview pages of the IRFG5210 datasheet.

n n n n n n Simple Drive Requirements Ease of Paralleling Hermetically Sealed Electrically Isolated Dynamic dv/dt Rating Light-weight Absolute Maximum Ratings (Per Die) Parameter ID @ VGS =± 10V, TC = 25°C Continuous Drain Current ID @ VGS =± 10V, TC = 100°C Continuous Drain Current IDM PD @ TC = 25°C VGS EAS IAR EAR dv/dt TJ T STG Pulsed Drain Current ➀ Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current ➀ Repetitive Avalanche.

📁 IRFG5210 Similar Datasheet

Other Datasheets by International Rectifier

Published: Jan 27, 2007 |