IRFB42N20DPBF Datasheet - International Rectifier

IRFB42N20DPBF HEXFET Power MOSFET

SMPS MOSFET PD- 95470 IRFB42N20DPbF HEXFET® Power MOSFET Applications High frequency DC-DC converters l Motor Control l Uninterrutible Power Supplies l Lead-Free l VDSS 200V RDS(on) max 0.055Ω ID 44A Benefits l Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) l Fully Characterized Avalanche Voltage and Current Absolute Maximum Ratings Parameter ID @ TC = 25°C ID @ TC = 100°C IDM PD @TA .

IRFB42N20DPBF Features

* e width limited by max. junction temperature.

* ISD ≤ 26A, di/dt ≤ 110A/µs, VDD ≤ V(BR)DSS,

* Pulse width ≤ 400µs; duty cycle ≤ 2%. Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS TJ ≤ 175°C Starting TJ = 25°C, L = 1

IRFB42N20DPBF Datasheet (168.93 KB)