IRFB42N20DPBF - HEXFET Power MOSFET

International Rectifier

Datasheet Details

Part number	IRFB42N20DPBF
Manufacturer	International Rectifier
File Size	168.93 KB
Description	HEXFET Power MOSFET
Datasheet	IRFB42N20DPBF_InternationalRectifier.pdf

e width limited by max. junction temperature.
ISD ≤ 26A, di/dt ≤ 110A/µs, VDD ≤ V(BR)DSS,.
Pulse width ≤ 400µs; duty cycle ≤ 2%. Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS TJ ≤ 175°C Starting TJ = 25°C, L = 1.45mH RG = 25Ω, IAS = 26A, VGS=10V Data and specifications subject to change without notice. This product has been designed and qualified for the Industrial market. Qualification Standards can be fou.

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Published: May 30, 2007 |