IRFB4110QPBF - HEXFET Power MOSFET

International Rectifier

Datasheet Details

Part number	IRFB4110QPBF
Manufacturer	International Rectifier
File Size	330.83 KB
Description	HEXFET Power MOSFET
Datasheet	IRFB4110QPBF_InternationalRectifier.pdf

16a, 16b. 4. PD (ave) = Average power dissipation per single avalanche pulse. 5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 6. Iav = Allowable avalanche current. 7. ∆T = Allowable rise in junction temperature, not to exceed Tjmax (assumed as 25°C in Figure 14, 15). tav = Average time in avalanche. D = Duty cycle in avalanche = tav.
f ZthJC(D, tav) = Transient thermal resistance, see Figures 13) 175 0 25 50 75 100 125 150 Starting T J , Junctio.

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Published: May 3, 2010 |