IRF9910 Datasheet (International Rectifier)

IRF9910, Power MOSFET

PD - 95869 IRF9910 HEXFET® Power MOSFET Applications l Dual SO-8 MOSFET for POL converters in desktop, servers, graphics cards, game consoles and set-top box VDSS 20V Q1 13.4m:@VGS = 10V Q2 9.3m:@VGS = 10V RDS(on) max ID 10A 12A Benefits l Very Low RDS(on) at 4.5V VGS l Low Gate Charge l Fully Characterized Avalanche Voltage and Current l 20V VGS Max.

Gate Rating 6 6 ' ' ' ' SO-8 Absolute Maximum Ratings Parameter VDS VGS ID @ TA = 25°C ID @

IRF9910 Features

* J 1 1 V = 0V GS V = 0V GS 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 VSD, Source-to-Drain Voltage (V) VSD, Source-to-Drain Voltage (V) Fig 15. Typical Source-Drain Diode Forward Voltage Fig 16. Typical Source-Drain Diode Forward Voltage , Drain-to -Source On Resist