IRF8910 - HEXFET Power MOSFET

International Rectifier

Datasheet Details

Part number	IRF8910
Manufacturer	International Rectifier ↗
File Size	274.54 KB
Description	HEXFET Power MOSFET
Datasheet	IRF8910_InternationalRectifier.pdf

d off by the control IC so the gate drive losses become much more significant. Secondly, the output charge Qoss and reverse recovery charge Qrr both generate losses that are transfered to Q1 and increase the dissipation in that device. Thirdly, gate charge will impact the MOSFETs’ susceptibility to Cdv/dt turn on. The drain of Q2 is connected to the switching node of the converter and therefore sees transitions between ground and Vin. As Q1 turns on and off there is a rate of change of drain vol.

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Published: Apr 16, 2005 |