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PD- 93766
IRF840LCS IRF840LCL
HEXFET® Power MOSFET
l l l l l l
Ultra Low Gate Charge Reduced Gate Drive Requirement Enhanced 30V VGS Rating Reduced CISS, COSS, CRSS Extremely High Frequency Operation Repetitive Avalanche Rated
D
VDSS = 500V
G S
RDS(on) = 0.85Ω ID = 8.0A
Description
This new series of low charge HEXFET® power MOSFETs achieve significant lower gate charge over conventional MOSFETs. Utilizing the new LCDMOS (low charge device MOSFETs) technology, the device improvements are achieved without added product cost, allowing for reduce gate drive requirements and total system savings. In addition, reduced switching losses and improved efficiency and achievable in a variety of high frequency applications.
IRF840LCS Datasheet
