IRF7759L2TR1PBF, IRF7759L2TRPBF Datasheet (International Rectifier)

IRF7759L2TR1PBF, IRF7759L2TRPBF, Power MOSFET

The IRF7759L2TR/TR1PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has a footprint smaller than a D2PAK and only 0.7 mm profile.

The DirectFET package is compatible with existing layou

PD - 96283 IRF7759L2TRPbF IRF7759L2TR1PbF RoHS Compliant, Halogen Free l Lead-Free (Qualified up to 260°C Reflow) l Ideal for High Performance Isolated Converter Primary Switch Socket l Optimized for Synchronous Rectification l Low Conduction Losses l High Cdv/dt Immunity l Low Profile (<0.7mm) l Dual Sided Cooling Compatible l Compatible with existing Surface Mount Techniques l Industrial Qualified l Typical values (unless otherwise specified) DirectFET Power MOSFET VDSS VGS ±20V ma

IRF7759L2TR1PBF Features

* ID, Drain-to-Source Current (A) ISD, Reverse Drain Current (A) 100 1000 100 100µsec DC 10 1msec 10 1 VGS = 0V 0.1 0.2 0.4 0.6 0.8 1.0 1.2 VSD, Source-to-Drain Voltage (V) 1 Tc = 25°C Tj = 175°C Single Pulse 0 1 10msec 0.1 10 100 VDS, Drain-to-Source Voltage (V) Fig 10. Typical Source-Drai