IRF7739L1TRPBF Datasheet (International Rectifier)

IRF7739L1TRPBF, Power MOSFET

The IRF7739L1TRPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has a footprint smaller than a D2PAK and only 0.7 mm profile.

The DirectFET package is compatible with existing layout ge

IRF7739L1TRPbF Applications l RoHS Compliant, Halogen Free l Lead-Free (Qualified up to 260°C Reflow) l Ideal for High Performance Isolated Converter Primary Switch Socket l Optimized for Synchronous Rectification l Low Conduction Losses l High Cdv/dt Immunity l Low Profile (<0.7mm) l Dual Sided Cooling Compatible l Compatible with existing Surface Mount Techniques l Industrial Qualified Applicable DirectFET Outline and Substrate Outline SB SC M2 M4 DirectFET Power MOSFET Typic

IRF7739L1TRPBF Features

* te-to-Source Voltage 300 February 13 ,2013 IRF7739L1TRPbF ID, Drain-to-Source Current (A) 1000 TJ = 175°C 100 10000 1000 OPERATION IN THIS AREA LIMITED BY R DS(on) 100μsec ISD, Reverse Drain Current (A) 10 TJ = 25°C VGS = 0V 1.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 VSD, Source-to-Drain Voltage (V) F