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IRF7703GPBF - Power MOSFET

Description

HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.

Features

  • signed and qualified for the Consumer market. Qualification Standards can be found on IR’s Web site. IR WORLD.

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Other Datasheets by International Rectifier (now Infineon)

Part Number Description
IRF7703 Power MOSFET
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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PD- 96148A IRF7703GPbF l l l l l l l Ultra Low On-Resistance P-Channel MOSFET Very Small SOIC Package Low Profile (< 1.2mm) Available in Tape & Reel Lead-Free Halogen-Free ! " # HEXFET® Power MOSFET VDSS -40V RDS(on) max (mW) 28@VGS = -10V 45@VGS = -4.5V ID -6.0A -4.8A Description HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the ruggedized device design, that International Rectifier is well known for, provides the de- 9 B T 'Ã2Ã9 &Ã2ÃT %Ã2ÃT $Ã2Ã9 ' & % $ signer with an extremely efficient and reliable device for battery and load management. The TSSOP-8 package has 45% less footprint area than the standard SO-8.
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