IRF7601 Datasheet (International Rectifier)

IRF7601, Power MOSFET

Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.

This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer

IRF7601 Features

* 66 ) 12.40 ( .488 ) NO TES : 1. CO NT RO LLING DIME NSIO N : M ILLIMET ER. 2. OUT LINE CON FO RMS T O EIA -481 & EIA-541. WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331 EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020 IR CAN