IRF7506 Datasheet (International Rectifier)

IRF7506, Power MOSFET

l S1 G1 S2 G2 1 8 D1 D1 D2 D2 2 7 VDSS = -30V RDS(on) = 0.27Ω 3 6 4 5 T o p V iew Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.

This benefit, combined with the fast switching speed and r

IRF7506 Features

* F EE D D IR E C T IO N N O TE S : 1 . O U TLIN E CO N FO R M S TO E IA -48 1 & EIA- 541 . 2 . C O NTRO L LIN G D IM E NSIO N : MILL IM ETE R. 3 30. 00 (12 .99 2) M A X. 14 .40 ( .56 6 ) 12 .40 ( .48 8 ) NO TE S : 1. C O N T R O LLIN G D IM EN SIO N : M ILL IM E T ER . 2. O U T LIN E C O N F O R