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IRF7484Q - AUTOMOTIVE MOSFET

Description

Specifically designed for Automotive applications, this Stripe Planar design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area.

Features

  • of this HEXFET power MOSFET are a 150°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These benefits combine to make this design an extremely efficient and reliable device for use in Automotive.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.DataSheet4U.com PD - 94803A AUTOMOTIVE MOSFET Typical Applications O O O Relay replacement Anti-lock Braking System Air Bag Advanced Process Technology Ultra Low On-Resistance Fast Switching Repetitive Avalanche Allowed up to Tjmax HEXFET® Power MOSFET IRF7484Q ID 14A VDSS RDS(on) max (mW) 40V 10@VGS = 7.0V Benefits O O O O S S 1 2 3 4 8 7 A A D D D D Description Specifically designed for Automotive applications, this Stripe Planar design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this HEXFET power MOSFET are a 150°C junction operating temperature, fast switching speed and improved repetitive avalanche rating.
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