IRF7343 - HEXFET Power MOSFET

International Rectifier

Datasheet Details

Part number	IRF7343
Manufacturer	International Rectifier
File Size	143.71 KB
Description	HEXFET Power MOSFET
Datasheet	IRF7343_InternationalRectifier.pdf

Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.

480 8 Coss 240 4 Crss 0 1 10 100 0 0 10 20 30 40 --VDS , Drain-to-Source Voltage (V) QG , Total Gate Charge (nC) Fig 20. Typical Capacitance Vs. Drain-to-Source Voltage Fig 21. Typical Gate Charge Vs. Gate-to-Source Voltage 100 Thermal Response (Z thJA ) D = 0.50 0.20 10 0.10 0.05 0.02 1 0.01 t1 SINGLE PULSE (.

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Published: Apr 16, 2005 |