IRF7317 Datasheet (International Rectifier)

IRF7317, HEXFET Power MOSFET

Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.

This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer

IRF7317 Features

* 6 800 600 4 400 C rs s 2 200 0 1 10 100 A 0 0 5 10 15 20 25 30 A - -V D S , D rain-to-S ource V oltage (V ) Q G , Total Gate Charge (nC) Fig 20. Typical Capacitance Vs. Drain-to-Source Voltage Fig 21. Typical Gate Charge Vs. Gate-to-Source Voltage 100 Thermal Response (Z thJA ) 0.