IRF7309 Datasheet (International Rectifier)

IRF7309, HEXFET Power MOSFET

Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area.

This benefit, combined with the fast switching speed and ruggedized device design for which HEXFET Power MOSFETs are well known, provides the de

IRF7309 Features

* ms 153 IRF7309 P-Channel Fig 22b. Gate Charge Test Circuit Fig 22b. Basic Gate Charge Waveform N- and P-Channel 100 D = 0.50 Thermal Response (Z thJA ) 0.20 10 0.10 0.05 0.02 1 0.01 PDM t SINGLE PULSE (THERMAL RESPONSE) 1 t2 Notes: 1. Duty factor D = t / t 2. Peak T =JP xZ DM 1 2 + T t