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IRF7309 HEXFET Power MOSFET

IRF7309 Description

PD - 9.1243B PRELIMINARY IRF7309 N-CHANNEL MOSFET 1 8 HEXFET® Power MOSFET Generation V Technology Ultra Low On-Resistance Dual N and P Channel Mosf.
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon.

IRF7309 Features

* ms 153 IRF7309 P-Channel Fig 22b. Gate Charge Test Circuit Fig 22b. Basic Gate Charge Waveform N- and P-Channel 100 D = 0.50 Thermal Response (Z thJA ) 0.20 10 0.10 0.05 0.02 1 0.01 PDM t SINGLE PULSE (THERMAL RESPONSE) 1 t2 Notes: 1. Duty factor D = t / t 2. Peak T =JP xZ DM 1 2 + T t

IRF7309 Applications

* The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The package i

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HEXFET Power MOSFET International Rectifier
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