IRF6724MPBF Datasheet (International Rectifier)

IRF6724MPBF, Power MOSFET

The IRF6724MPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.7 mm profile.

The DirectFET package is compatible with existing layout geometries use

PD -97131A IRF6724MPbF IRF6724MTRPbF RoHs Compliant and Halogen Free VDSS VGS RDS(on) RDS(on) l Low Profile (<0.7 mm) 30V max ±20V max 1.9mΩ@ 10V 2.7mΩ@ 4.5V l Dual Sided Cooling Compatible l Ultra Low Package Inductance Qg tot Qgd Qgs2 Qrr Qoss Vgs(th) l Optimized for High Frequency Switching 33nC 10nC 3.9nC 34nC 20nC 1.8V l Ideal for CPU Core DC-DC Converters l Optimized for Sync.

FET socket of Sync.

Buck Converter l Low Conduction and Switching Losses l Compatible with existing Surfac

IRF6724MPBF Features

* to-Drain Voltage (V) 1msec 0.1 10.0 100.0 VDS , Drain-toSource Voltage (V) Fig 10. Typical Source-Drain Diode Forward Voltage Typical VGS(th) Gate threshold Voltage (V) 150 2.5 Fig11. Maximum Safe Operating Area ID, Drain Current (A) 2.0 100 ID = 100µA 1.5 50 1.0 0 25 50 75 100 125 150 TC