IRF6716MTRPBF - N-Channel HEXFET Power MOSFET

International Rectifier

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Datasheet Details

Part number	IRF6716MTRPBF
Manufacturer	International Rectifier
File Size	669.76 KB
Description	N-Channel HEXFET Power MOSFET
Datasheet	IRF6716MTRPBF_InternationalRectifier.pdf

IRF6716MTRPBF Product details

Description

The IRF6716MPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.6 mm profile.

Features

Voltage (V) 1 T A = 25°C T J = 150°C 0.1 0.01 Single Pulse 0.10 1.00 10.00 100.00 VDS, Drain-to-Source Voltage (V) Fig 10. Typical Source-Drain Diode Forward Voltage 40 35 30 25 20 15 10 5 0 25 50 75 100 125 150 T C , Case Temperature (°C) Fig 11. Maximum Safe Operating Area 3.0 Typical VGS(th) Gate threshold Voltage (V) 2.5 ID, Drain Current (A) 2.0 ID = 100µA ID = 250µA www. DataSheet4U. com 1.5 ID = 1.0mA ID = 1.0A 1.0 -75 -50 -25 0 25 50 75 100 125 150 T J , Temperature ( °C ).

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Published: May 31, 2007 |