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IRF6713STRPBF - DirectFET TM Power MOSFET

Download the IRF6713STRPBF datasheet PDF. This datasheet also covers the IRF6713SPBF variant, as both devices belong to the same directfet tm power mosfet family and are provided as variant models within a single manufacturer datasheet.

Description

The IRF6713SPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a MICRO-8 and only 0.7 mm profile.

Features

  • n Diode Forward Voltage 100 Fig11. Maximum Safe Operating Area Typical VGS(th) Gate threshold Voltage (V) 3.0 80 ID, Drain Current (A) 2.5 60 2.0 ID = 50µA 40 1.5 ID = 100µA ID = 250µA ID = 1.0mA ID = 1.0A 20 1.0 0 25 50 75 100 125 150 T C , Case Temperature (°C) 0.5 -75 -50 -25 0 25 50 75 100 125 150 T J , Temperature ( °C ) Fig 12. Maximum Drain Current vs. Case Temperature 150 EAS , Single Pulse Avalanche Energy (mJ) Fig 13. Typical Threshold Voltage vs. Junction Temperature ID.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IRF6713SPBF_InternationalRectifier.pdf) that lists specifications for multiple related part numbers.

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Other Datasheets by International Rectifier (now Infineon)

Part Number Description
IRF6713SPBF DirectFET TM Power MOSFET
IRF6710S2 Power MOSFET
IRF6710S2TR1PbF Power MOSFET
IRF6710S2TRPbF Power MOSFET
IRF6711SPBF Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
www.DataSheet4U.com IRF6713SPbF IRF6713STRPbF Typical values (unless otherwise specified) PD - 96129A DirectFET™ Power MOSFET ‚ RDS(on) Qgs2 2.7nC l l l l l l l l l l RoHS Compliant Containing No Lead and Bromide  Low Profile (<0.7 mm) Dual Sided Cooling Compatible  Ultra Low Package Inductance Optimized for High Frequency Switching  Ideal for CPU Core DC-DC Converters Optimized for both Sync.FET and some Control FET application Low Conduction and Switching Losses Compatible with existing Surface Mount Techniques  100% Rg tested VDSS Qg tot VGS Qgd 6.3nC RDS(on) Qoss 14nC 25V max ±20V max 2.2mΩ@ 10V 3.5mΩ@ 4.5V Qrr 18nC Vgs(th) 1.9V 21nC SQ MT MP DirectFET ™ ISOMETRIC Applicable DirectFET Outline and Substrate Outline (see p.
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