Datasheet Details
| Part number | IRF6706S2TRPBF |
|---|---|
| Manufacturer | International Rectifier (now Infineon) |
| File Size | 284.88 KB |
| Description | DirectFET Power MOSFET |
| Datasheet |
 IRF6706S2TRPBF Datasheet
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Description
The IRF6706S2TRPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFET TM packaging to achieve improved performance in a package that has the footprint of a MICRO-8 and only 0.7 mm profile.
Features
- -40°C 10 10 1msec 10msec DC 1 1 VGS = 0V 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 VSD, Source-to-Drain Voltage (V) 0.1 T A = 25°C T J = 150°C Single Pulse 0.01 0.01 0.10 1.00 10.00 100.00 VDS, Drain-to-Source Voltage (V) Fig 10. Typical Source-Drain Diode Forward Voltage Typical VGS(th) Gate threshold Voltage (V) 70 60 Fig 11. Maximum Safe Operating Area 3.0 2.5 2.0 1.5 1.0 0.5 0.0 -75 -50 -25 0 25 50 75 100 125 150 175 T J , Temperature ( °C ) ID = 25µA ID = 250µA ID = 1.0mA ID.