Description
The IRF6631PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a Micro-8 and only 0.7 mm profile.
Features
- ID, Drain Current (A)
Typical VGS(th) Gate threshold Voltage (V)
Fig 11. Maximum Safe Operating Area
2.5
40 30 20 10 0 25 50 75 100 125 150 T C , Case Temperature (°C)
2.0
ID = 50µA 1.5
1.0 -75 -50 -25 0 25 50 75 100 125 150 T J , Temperature ( °C )
Fig 12. Maximum Drain Current vs. Case Temperature
60
EAS , Single Pulse Avalanche Energy (mJ)
Fig 13. Typical Threshold Voltage vs. Junction Temperature
ID TOP 3.1A 4.5A BOTTOM 10A
50 40 30 20 10 0 25 50 75
100
125
150
Starting T J , Jun.