IRF430 - N-Channel Power MOSFET

International Rectifier

Datasheet Details

Part number	IRF430
Manufacturer	International Rectifier
File Size	146.28 KB
Description	N-Channel Power MOSFET
Datasheet	IRF430_InternationalRectifier.pdf

n n n n n Repetitive Avalanche Ratings Dynamic dv/dt Rating Hermetically Sealed Simple Drive Requirements Ease of Paralleling Absolute Maximum Ratings Parameter ID @ VGS = 10V, TC = 25°C ID @ VGS = 10V, TC = 100°C I DM PD @ TC = 25°C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current ➀ Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy ➁ Avalanche Current ➀ Repetitive Avalanche Energy ➀ Peak Dio.

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Published: Apr 16, 2005 |