IRF3808SPBF - AUTOMOTIVE MOSFET

International Rectifier

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Datasheet Details

Part number	IRF3808SPBF
Manufacturer	International Rectifier
File Size	352.86 KB
Description	AUTOMOTIVE MOSFET
Datasheet	IRF3808SPBF_InternationalRectifier.pdf

IRF3808SPBF Product details

Description

Absolute Maximum Ratings ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS EAS IAR EAR dv/dt TJ TSTG Designed specifically for Automotive applications, this Advanced Planar Stripe HEXFET ® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area.Additional

Features

of this HEXFET power MOSFET are a 175°C junction operating temperature, low RθJC, fast switching speed and improved repetitive avalanche rating. This combination makes the design an extremely efficient and reliable choice for use in higher power Automotive electronic systems and a wide variety of other.

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Published: Apr 24, 2006 |