IRF3007LPBF - HEXFET Power MOSFET

International Rectifier

Datasheet Details

Part number	IRF3007LPBF
Manufacturer	International Rectifier
File Size	319.82 KB
Description	HEXFET Power MOSFET
Datasheet	IRF3007LPBF_InternationalRectifier.pdf

This design of HEXFET® Power MOSFETs utilizes the lastest processing techniques to achieve extremely low on-resistance per silicon area.

l Ultra Low On-Resistance l 175°C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free G.

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Published: Mar 21, 2007 |