Datasheet4U Logo Datasheet4U.com

IPS5551T - FULLY PROTECTED HIGH SIDE POWER MOSFET SWITCH

Description

The IPS5551T is a fully protected three terminal high side switch with built-in short-circuit, over-temperature, ESD protection, inductive load capability.

The input signal is referenced to Vcc.

Features

  • Over temperature shutdown Over current shutdown Active clamp Input referenced to + Vcc E. S. D protection Input referenced to Vcc Product Summary Rds(on) V clamp Ishutdown Vcc (op. ) 6.0mΩ (max) 40V 100A 5.5 - 18V.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
IPS-250 Spqnnungswandler Battcenter
IPS-265 Low Cost K-Band Transceiver InnoSenT
IPS-BN0703601 LCD InferPoint
IPS-DDK Driver Development Kit Zoran Corporation
IPS031N03L N-Channel MOSFET INCHANGE

Other Datasheets by International Rectifier (now Infineon)

Part Number Description
IPS511 FULLY PROTECTED HIGH SIDE POWER MOSFET SWITCH
IPS511G FULLY PROTECTED HIGH SIDE POWER MOSFET SWITCH
IPS511S FULLY PROTECTED HIGH SIDE POWER MOSFET SWITCH
IPS512G FULLY PROTECTED HIGH SIDE POWER MOSFET SWITCH
IPS521 FULLY PROTECTED HIGH SIDE POWER MOSFET SWITCH

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Data Sheet No. PD60168-D IPS5551T FULLY PROTECTED HIGH SIDE POWER MOSFET SWITCH Features • • • • • • Over temperature shutdown Over current shutdown Active clamp Input referenced to + Vcc E.S.D protection Input referenced to Vcc Product Summary Rds(on) V clamp Ishutdown Vcc (op.) 6.0mΩ (max) 40V 100A 5.5 - 18V Description The IPS5551T is a fully protected three terminal high side switch with built-in short-circuit, over-temperature, ESD protection, inductive load capability. The input signal is referenced to Vcc. When the input voltage Vcc - Vin is higher than the specified threshold, the output power MOSFET is turned on. When the Vcc - Vin is lower than the specified Vil threshold, the output MOSFET is turned off. Input noise immunity is improved by an hysterisis.
Published: |