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GB25RF120K IGBT PIM MODULE

GB25RF120K Description

PD - 94552 GB25RF120K IGBT PIM MODULE .

GB25RF120K Features

* Low VCE (on) Non Punch Through IGBT Technology
* Low Diode VF
* 10µs Short Circuit Capability
* Square RBSOA
* HEXFRED Antiparallel Diode with Ultrasoft Diode Reverse Recovery Characteristics
* Positive VCE (on) Temperature Coefficient
* Cera

GB25RF120K Applications

* TJ is limited to +125°C. (See File E78996). ‚ Power dependent on temperature. TJ not to exceed TJ max.
* Energy losses include "tail" and diode reverse recovery. www. irf. com 3 GB25RF120K Inverter 50 45 40 35 ICE (A) 50 VGE = 18V VGE = 15V VGE = 12V VGE = 10V VGE = 8.0V ICE (A) 45 40 35 30

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IGBT PIM MODULE International Rectifier
International Rectifier GB25RF120K-like datasheet