F9Z24N - IRF9Z24N

International Rectifier

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Datasheet Details

Part number	F9Z24N
Manufacturer	International Rectifier ↗
File Size	126.36 KB
Description	IRF9Z24N
Datasheet	F9Z24N_InternationalRectifier.pdf

F9Z24N Product details

Description

l l D G ID = -12A S Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.The TO-220 package is universally preferred for all commercial-industrial application

Features

2 5 5 ) 6 . 1 0 (. 2 4 0 ) -B 4 . 6 9 ( .1 8 5 ) 4 . 2 0 ( .1 6 5 ) 1 .3 2 (. 0 5 2 ) 1 .2 2 (. 0 4 8 ) 4 1 5 . 2 4 ( .6 0 0 ) 1 4 . 8 4 ( .5 8 4 ) 1 . 1 5 ( .0 4 5 ) M IN 1 2 3 L E A D A S S IG N M E N T S 1 - G A TE 2 - D R AIN 3 - SO URCE 4 - D R AIN 1 4 . 0 9 (.5 5 5 ) 1 3 . 4 7 (.5 3 0 ) 4 . 0 6 (. 1 6 0 ) 3 . 5 5 (. 1 4 0 ) 3X 1 .4 0 (. 0 5 5 ) 1 .1 5 (. 0 4 5 ) 0 . 9 3 ( .0 3 7 ) 3 X 0 . 6 9 ( .0 2 7 ) 0 .3 6 (. 0 1 4 ) M B A M 3X 0 . 5 5 (. 0 2 2 ) 0 . 4 6 (. 0 1 8 ) 2 . 5 4.

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Published: May 1, 2010 |