Description
Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area.
Features
- l l l l l l l l
HEXFET® Power MOSFET
D
AUIRL3705Z AUIRL3705ZS AUIRL3705ZL
V(BR)DSS RDS(on) typ. 55V 6.5mΩ 8.0mΩ 86Al 75A
Logic Level Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified.
- G S
max. ID (Silicon Limited) ID (Package Limited).
