Description
Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest
D
DD
processing techniques to achieve extremely low onresistance per silicon area.Additional
Features
- l Logic Level l Advanced Process Technology l Ultra Low On-Resistance
AUIRL1404ZL
HEXFET® Power MOSFET
D V(BR)DSS
40V
l 175°C Operating Temperature
RDS(on) typ. 2.5mΩ
l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free, RoHS Compliant
G
max. 3.1mΩ
lÃID (Silicon Limited) 180A
l Automotive Qualified.
- S ID (Package Limited) 160A.
