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AUIRFU4615 - Power MOSFET

Download the AUIRFU4615 datasheet PDF. This datasheet also covers the AUIRFR4615 variant, as both devices belong to the same power mosfet family and are provided as variant models within a single manufacturer datasheet.

Description

Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area.

Features

  • Advanced Process Technology l Low On-Resistance l 175°C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free, RoHS Compliant l Automotive Qualified.
  • l AUIRFR4615 AUIRFU4615 D HEXFET® Power MOSFET G S VDSS RDS(on) typ. max. ID D D 150V 34m: 42m: 33A.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (AUIRFR4615_InternationalRectifier.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
AUIRFU4105Z Power MOSFET Infineon
AUIRFU4292 Power MOSFET Infineon
AUIRFU120Z Power MOSFET Infineon
AUIRFU5305 Power MOSFET Infineon
AUIRFU540Z Power MOSFET Infineon

Other Datasheets by International Rectifier (now Infineon)

Part Number Description
AUIRFU4104 Power MOSFET
AUIRFU4105Z HEXFET Power MOSFET
AUIRFU4292 Power MOSFET
AUIRFU024N Power MOSFET
AUIRFU120Z Power MOSFET

Full PDF Text Transcription

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AUTOMOTIVE GRADE PD -96398A Features Advanced Process Technology l Low On-Resistance l 175°C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free, RoHS Compliant l Automotive Qualified * l AUIRFR4615 AUIRFU4615 D HEXFET® Power MOSFET G S VDSS RDS(on) typ. max. ID D D 150V 34m: 42m: 33A Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating .
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