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AUIRFU120Z - Power MOSFET

Download the AUIRFU120Z datasheet PDF (AUIRFR120Z included). The manufacturer datasheet provides complete specifications, pinout details, electrical characteristics, and typical applications for power mosfet.

Description

Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area.

Features

  • l l l l l l l AUIRFR120Z AUIRFU120Z HEXFET® Power MOSFET V(BR)DSS 100V RDS(on) typ. 150mΩ 190mΩ 8.7A D Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified.
  • D G S max. ID.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (AUIRFR120Z_InternationalRectifier.pdf) that lists specifications for multiple related part numbers.

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Full PDF Text Transcription

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PD - 96345 AUTOMOTIVE MOSFET Features l l l l l l l AUIRFR120Z AUIRFU120Z HEXFET® Power MOSFET V(BR)DSS 100V RDS(on) typ. 150mΩ 190mΩ 8.7A D Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified * D G S max. ID Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating .
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