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AUIRFR120Z - Power MOSFET

Description

Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area.

Features

  • l l l l l l l AUIRFR120Z AUIRFU120Z HEXFET® Power MOSFET V(BR)DSS 100V RDS(on) typ. 150mΩ 190mΩ 8.7A D Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified.
  • D G S max. ID.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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PD - 96345 AUTOMOTIVE MOSFET Features l l l l l l l AUIRFR120Z AUIRFU120Z HEXFET® Power MOSFET V(BR)DSS 100V RDS(on) typ. 150mΩ 190mΩ 8.7A D Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified * D G S max. ID Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating .
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