Datasheet Details
- Part number
- AUIRFR024N
- Manufacturer
- International Rectifier
- File Size
- 405.94 KB
- Datasheet
- AUIRFR024N-InternationalRectifier.pdf
- Description
- Power MOSFET
AUIRFR024N Description
AUTOMOTIVE GRADE PD - 96355 .AUIRFR024N Features
* l l l l l l l l l AUIRFR024N AUIRFU024N HEXFET® Power MOSFET D Advanced Planar Technology Low On-Resistance Dynamic dV/dT Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive QualifiedAUIRFR024N Applications
* this Cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low onresistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremel
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